MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage

Product Description

MR0A08BCYS35 Magnetoresistive Random Access Memory (MRAM) EHHD024A0A41Z DE118-RS-20/6.35 Memory Data Storage

FEATURES BENEFITS

• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design

• Improves reliability by replacing battery-backed SRAM

• 3.3 Volt power supply

• Fast 35 ns read/write cycle

• SRAM compatible timing

• Native non-volatility

• Unlimited read & write endurance

• Data always non-volatile for >20 years at temperature

• Commercial and industrial temperatures

• All products meet MSL-3 moisture sensitivity level

• RoHS-Compliant TSOP2 and BGA packages

BENEFITS

• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design

• Improves reliability by replacing battery-backed SRAM