Walton Electronics Co., Ltd.

IPB200N25N3G Semiconductors Discrete Transistors Original And New MOSFET

Product Details:
Place of Origin: Original
Brand Name: Original
Certification: ISO9001:2015standard
Model Number: IPB200N25N3G
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact us to win best offer
Packaging Details: Standard
Delivery Time: 1-3workdays
Payment Terms: L/C, T/T, Western Union,PayPal
Supply Ability: 10000pcs/months
  • Detail Information
  • Product Description

Detail Information

Package: TO-263-3 D/C: Newest
Condition: Brand New And Original Lead Time: In Stock
Mounting Style: SMD/SMT
High Light:

Semiconductors Discrete Transistors


Mosfet Power Transistor IPB200N25N3G


1 N Channel Mosfet Power Transistor

Product Description

Product Attribute Attribute Value
1 Channel
250 V
64 A
17.5 mOhms
- 20 V, + 20 V
2 V
86 nC
- 55 C
+ 175 C
300 W
Cut Tape
Configuration: Single
Fall Time: 12 ns
Forward Transconductance - Min: 61 S
Height: 4.4 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 20 ns
Series: OptiMOS 3
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: OptiMOS 3 Power-Transistor
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 18 ns
Width: 9.25 mm
Part # Aliases: SP000677896 IPB2N25N3GXT IPB200N25N3GATMA1
Unit Weight: 0.139332 oz

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