MT47H128M16RT-25E-C EMMC Memory Chips 128MX16 FBGA Data Storage

Product Description

MT47H128M16RT-25E-C Original DRAM DDR2 2G 128MX16 FBGA Data Storage

Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Duplicate output strobe (RDQS) option for x8

• DLL to align DQ and DQS transitions with CK

• 8 internal banks for concurrent operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1 t CK

• Programmable burst lengths: 4 or 8

• Adjustable data-output drive strength

• 64ms, 8192-cycle refresh

• On-die termination (ODT)

• Industrial temperature (IT) option

• RoHS-compliant

• Supports JEDEC clock jitter specification