Walton Electronics Co., Ltd.

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

Product Details:
Place of Origin: original
Brand Name: original
Certification: ISO9001:2015standard
Model Number: MRF9045LR1
Payment & Shipping Terms:
Minimum Order Quantity: 10pcs
Price: 9.43-9.88SD/PCS
Packaging Details: standard
Delivery Time: 2-3 workdays
Payment Terms: L/C, Western Union,palpay
Supply Ability: 1000pcs/months
  • Detail Information
  • Product Description

Detail Information

Product Name: MRF9045LR1 Product Category: RF Bipolar Transistors
Technology: Si Product Type: RF Bipolar Transistors
Gain: 18.8dB Mounting Style: SMD/SMT
High Light:

MRF9045LR1 RF Bipolar Transistors

,

RF Bipolar Transistors 18.8dB

,

ASI MRF9045LR1

Product Description

MRF9045LR1Transistors RF Bipolar Transistors Si original in stock

 

The ASI MRF9045LR1 is a high voltage, gold-metalized,

laterally diffused metal oxide semiconductor. Ideal for today's

 RF power amplifier Applications.

 

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB 0

 

RF MOSFET Transistors
RoHS: Details
N-Channel
Si
4.25 A
65 V
945 MHz
18.8 dB
60 W
SMD/SMT
NI-360
Tray
Configuration: Single
Forward Transconductance - Min: 3 S
Pd - Power Dissipation: 117 W
Product Type: RF MOSFET Transistors
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V
Unit Weight: 0.032480 oz
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
MRF9045LR1 MRF9045LSR1
5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed
for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high ga
in and broadband performance of these
devices make them ideal for large
signal, common
source amplifier applica-
tions in 28 volt base station equipment.
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
No

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